MEASUREMENT OF ENERGY LOSS OF LIGHT IONS USING SILICON SURFACE BARRIER DETECTOR

نویسندگان

چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Energy loss by keV ions in silicon.

Using silicon photodiodes with an ultrathin passivation layer, the average total energy lost to silicon target electrons (electronic stopping) by incident low energy ions and the recoil target atoms they generate is directly measured. We find that the total electronic energy deposition and the ratio of the total nuclear to electronic stopping powers for the incident ions and their recoils each ...

متن کامل

Measurement of Radon Concentrations and Surface Exhalation Rates using CR-39 detector in Soil Samples of Al-Diwaniyah Governorate, Iraq

Introduction: Natural radioactivity in the soil is considered a major indicator of radiological contamination. Primordial radionuclides are the main source of natural radioactivity. Natural radioactivity transfers radionuclides into the environment and poses radiation hazards to people's health. Therefore, the present study aimed to determine the radon concentration an...

متن کامل

Change of diffused and scattered light with surface roughness of p-type porous Silicon

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

متن کامل

Change of diffused and scattered light with surface roughness of p-type porous Silicon

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

متن کامل

Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE)

The range distributions of low-energy nitrogen and oxygen (2-3 keV) ions is silicon are measured and compared with these available in theories. The nitrogen distribution is very close to a Gaussian distribution as predicted by theory. The oxygen profile however, indicates a surface localized peak along with a shoulder and a long tail into the sample. The surface peak is beleived to he the resul...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of Research in Engineering and Technology

سال: 2014

ISSN: 2321-7308,2319-1163

DOI: 10.15623/ijret.2014.0315055